Полевые транзисторы
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- Наименование
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Корпус
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Конфигурация и полярность
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Максимальное напряжение сток-исток
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Ток стока номинальный при 25°C, без учета ограничений корпуса
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Сопротивление открытого канала (мин)
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Сопротивление открытого канала при диапазоне Uзатв(ном)
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Диапазон номинальных напряжений затвора
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Максимальное напряжение затвора
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Заряд затвора
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Рассеиваемая мощность
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Примечание
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Ёмкость затвора
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Особенности
Фильтр×
- Производитель:CN BELL ×
Найдено: 341
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BLM10P03 (CN BELL)
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BLM10P03-D (CN BELL)
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P-Channel Power MOSFET, TO-252-2L, -30 V, -40 A, 0,008 Ohm |
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High density cell design for lower Rdson, Excellent package for good heat dissipation, Power switching application, Hard switched and High frequency circuits, Battery Protection |
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BLM10P03-E (CN BELL)
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P-Channel Power MOSFET, SOP8, -30 V, -15 A, 0,008 Ohm |
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High density cell design for lower Rdson, Excellent package for good heat dissipation, Power switching application, Hard switched and High frequency circuits, Battery Protection |
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BLM10P03-Q (CN BELL)
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нет в наличии | — |
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P-Channel Power MOSFET, PDFN5*6, -30 V, -30 A, 0,008 Ohm |
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High density cell design for lower Rdson, Excellent package for good heat dissipation, Power switching application, Hard switched and High frequency circuits, Battery Protection |
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BLM10P03-R (CN BELL)
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нет в наличии | — |
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P-Channel Power MOSFET, PDFN3.3*3.3, -30 V, -24 A, 0,008 Ohm |
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High density cell design for lower Rdson, Excellent package for good heat dissipation, Power switching application, Hard switched and High frequency circuits, Battery Protection |
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BLM1216Y (CN BELL)
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нет в наличии | — |
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— | — | — | P-Channel Trench MOSFET, SOT-23, -12 V, -8 A, 0,014 Ohm | — | — |
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BLM12N06 (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 60 V, 70 A, 0,01 Ohm | — | — |
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BLM12N06L (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 60 V, 70 A, 0,009 Ohm | — | — |
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BLM12N08-B (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-263, 80 V, 70 A, 0,0095 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM12N08-D (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-252-2L, 80 V, 70 A, 0,0095 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM12N08-P (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-220, 80 V, 70 A, 0,0095 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM14N08-D (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-252-2L, 80 V, 60 A, 0,011 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM14N08-P (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-220, 80 V, 60 A, 0,011 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM15N06 (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 60 V, 60 A, 0,012 Ohm | — | — |
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BLM15N06L (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 60 V, 60 A, 0,011 Ohm | — | — |
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BLM16N10-D (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-252-2L, 100 V, 60 A, 0,0145 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM16N10-P (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-220, 100 V, 60 A, 0,0145 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM2004NE (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, SOT23-6L, 20 V, 6 A, 0,017 Ohm |
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High Power and current handing capability, Lead free product is acquired, Surface Mount Package, PWM application, Load switch |
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BLM2008E (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TSSOP-8, 20 V, 6 A, 0,017 Ohm |
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High Power and current handing capability, Lead free product is acquired, Surface Mount Package, PWM application, Load switch |
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BLM2010E (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TSSOP-8, 20 V, 7 A, 0,016 Ohm |
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High Power and current handing capability, Lead free product is acquired, Surface Mount Package, PWM application, Load switch |
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