RF Bipolar Transistor; Transistor Type:RF Bipolar; Package/Case:SOT-23; Power Dissipation, Pd:150mW; Output Third Order Intercept Point, IP3:20dB; DC Current Gain Min (hfe):11; Leaded Process Compatible:Yes; Noise Figure, Typ:0.9dB
Корпус TO236 , Примечание —