FEATURES SUMMARY

DENSITY

• 2Gbit: 2048blocks

Nand FLASH INTERFACE

• NAND Interface
• ADDRESS / DATA Multiplexing

SUPPLY VOLTAGE

• Vcc = 3.0/1.8V Volt core supply voltage for Program, Erase and Read operations.

MEMORY CELL ARRAY

• X8: (2K + 64) bytes x 64 pages x 2048 blocks
• X16: (1k+32) words x 64 pages x 2048 blocks

PAGE SIZE

• X8: (2048 + 64 spare) bytes
• X16:(1024 + 32spare) Words

Block SIZE

• X8: (128K + 4K spare) bytes
• X16:(64K + 2K spare) Words

PAGE READ / PROGRAM

• Random access: 25us (Max)
• Sequential access: 25ns / 45ns (3.0V/1.8V, min.)
• Program time(3.0V/1.8V): 200us / 250us (Typ)
• Multi-page program time (2 pages): 200us / 250us (3.0V/1.8V, Typ.)

BLOCK ERASE / MULTIPLE BLOCK ERASE

• Block erase time: 3.5 ms (Typ)
• Multi-block erase time (2 blocks): 3.5ms/ 3.5ms (3.0V/1.8V, Typ.)

SEQURITY

• OTP area - Sreial number (unique ID)
• Non-volatile protection option for OTP and Block0(Opt.)
• Hardware program/erase disabled during power transition

Корпус TSOP48