MOSFET MODULE, H BRIDGE 100V; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:80A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.3V; Case Style:SEMITOP 2; Termination Type:Screw; Centres, Fixing:38mm; Current, Idm Pulse:120A; Depth, External:28mm; Diameter, Fixing Hole:2mm; IC Package (Case style):A; Length / Height, External:15.43mm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:4; Voltage, Vds Max:100V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:2.5V; Width, External:40.5mm
Напряжение сток-исток максимальное 100 В, Максимальный рабочий ток при 25°C 80 А, Максимальный рабочий ток при 100°C 4 А