Память
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- Наименование
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Корпус
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Тип памяти
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Подтип памяти
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Интерфейс
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Объём памяти
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Организация памяти
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Напряжение питания
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Особенности
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Рабочая температура
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Время доступа
Фильтр×
- Производитель:CN BELL ×
Найдено: 614
Вид:
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BL25CM1A-PARS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V |
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BL24C08F-PARS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 5000V |
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BL25CM2A5-PARC (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V |
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BL24C02F-PARS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-PATS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-PATC (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-SFRS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-SFTS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-SFTC (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-DARS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-DARC (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-DATS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-DATC (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-NTRS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-NTTS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-NTTC (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-TCRS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-TCTS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-TCTC (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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BL24C02F-RRRS (CN BELL)
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нет в наличии | — |
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1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 6000V |
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