Полевые транзисторы
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- Наименование
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Корпус
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Конфигурация и полярность
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Максимальное напряжение сток-исток
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Ток стока номинальный при 25°C, без учета ограничений корпуса
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Сопротивление открытого канала (мин)
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Сопротивление открытого канала при диапазоне Uзатв(ном)
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Диапазон номинальных напряжений затвора
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Максимальное напряжение затвора
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Заряд затвора
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Рассеиваемая мощность
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Примечание
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Ёмкость затвора
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Особенности
Фильтр×
- Производитель:CN BELL ×
Найдено: 341
Вид:
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BLM2010E (CN BELL)
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N-Channel Trench MOSFET, TSSOP-8, 20 V, 7 A, 0,016 Ohm |
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High Power and current handing capability, Lead free product is acquired, Surface Mount Package, PWM application, Load switch |
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BLM22N10-D (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-252-2L, 100 V, 40 A, 0,018 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM22N10-P (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO220, 100 V, 50 A, 0,018 Ohm |
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Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
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BLM3050K (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TO-252-2L, 30 V, 50 A, 0,008 Ohm |
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High density cell design for ultra low Rdson, Fully characterized Avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, Special process technology for high ESD capability, Power switching application, Hard switched and high frequency circuits, Uninterruptible Power Supply |
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BLM30N06L (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 60 V, 20 A, 0,025 Ohm | — | — |
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BLM30N10 (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 100 V, 25 A, 0,028 Ohm | — | — |
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BLM30N10L (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 100 V, 25 A, 0,025 Ohm | — | — |
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BLM3401AY (CN BELL)
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нет в наличии | — |
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P-Channel Trench MOSFET, SOT-23-3L, -30 V, -4,4 A, 0,045 Ohm |
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High power and current handing capability, Lead free product is acquired, Surface Mount Package, PWM applications, Load switch, Power management |
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BLM3407A (CN BELL)
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нет в наличии | — |
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BLM3407AY (CN BELL)
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нет в наличии | — |
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— | — | — | P-Channel Trench MOSFET, SOT-23, -30 V, -4,1 A, 0,055 Ohm | — | — |
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BLM3415 (CN BELL)
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нет в наличии | — |
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P-Channel Trench MOSFET, SOT-23, -20 V, -4 A, 0,034 Ohm |
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ESD Rating: 2500V HBM, High Power and current handing capability, Lead free product is acquired, Surface mount package, PWM application, Load switch |
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BLM3416 (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, SOT23, 20 V, 6,5 A, 0,019 Ohm | — | — |
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BLM35N10 (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 100 V, 20 A, 0,029 Ohm | — | — |
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BLM35N10L (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 100 V, 20 A, 0,028 Ohm | — | — |
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BLM40P05 (CN BELL)
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нет в наличии | — |
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— | — | — | P-Channel Trench MOSFET, SOT23, -40 V, -3,3 A, 0,069 Ohm | — | — |
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BLM40P07S (CN BELL)
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нет в наличии | — |
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— | — | — | P-Channel Trench MOSFET, SOP8, -40 V, -6,2 A, 0,016 Ohm | — | — |
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BLM8205A (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, TSSOP-8, 19,5 V, 6 A, 0,021 Ohm |
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High Power and current handing capability, Lead free product is acquired, Surface Mount Package, Battery protection, Load switch, Power management |
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BLM90N10L (CN BELL)
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нет в наличии | — |
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— | — | — | N-Channel Trench MOSFET, TO252, 100 V, 10 A, 0,072 Ohm | — | — |
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BLM9926 (CN BELL)
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нет в наличии | — |
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N-Channel Trench MOSFET, SOP-8, 20 V, 6 A, 0,026 Ohm |
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High density cell design for ultra low Rdson, Fully characterized Avalanche voltage and current, Power switching application, Hard Switched and High Frequency Circuits, Uninterruptible Power Supply |
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BLP065N08G-B (CN BELL)
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нет в наличии | — |
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N-Channel Double Trench MOSFET, TO-263, 85 V, 80 A, 0,0054 Ohm |
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Fast Switching, Low On-Resistance, Low Gate Charge, Low Reverse transfer capacitances, High avalanche ruggedness, RoHS product, Motor drivers, High speed switching applications |
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