IGBT транзисторы
?page=4&sort=ItemsParamsX.rank&direction=desc
- Производитель
- Наименование
-
Корпус
-
Напряжение К-Э максимальное
-
Ток коллектора максимальный при 25°C
-
Напряжение насыщения К-Э
-
Время включения
-
Время выключения
-
Время восстановления диода
-
Максимальная мощность
-
Заряд затвора
-
Тип входа
-
Тип
-
Примечание
Найдено: 5045
Вид:
| | | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CM2400HCB-34N (MIT) | 4 шт. | от 179 791,00 |
4 дн. |
— |
 |
 |
 |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel |
| CM600HG-130H (MIT) | 4 шт. | от 167 049,00 |
3 дн. |
— |
 |
 |
— |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 600A I(C), 6500V V(BR)CES, N-Channel |
| CM400DY-12NF (MIT) | 12 шт. | от 22 769,50 |
6 дн. |
— |
 |
 |
 |
— | — | — |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel |
| CM200RL-24NF (MIT) | 6 шт. | от 61 910,10 |
8 дн. |
— |
 |
 |
 |
— | — | — |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel |
| GT60N321 (TOS) | 80 шт. | от 902,34 |
4 дн. |
— |
 |
 |
— |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel |
| CM600HU-24F (MIT) | 28 шт. | от 16 030,40 |
8 дн. |
— |
 |
 |
 |
— | — | — |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel |
| GT50J325 (TOS) | 3 шт. | от 1 831,49 |
4 дн. |
 |
 |
 |
— |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel |
| CM50MXA-24S (MIT) | 4 шт. | от 20 809,00 |
8 дн. |
— |
 |
 |
 |
— | — | — |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| CM150RL-24NF (MIT) | 3 шт. | от 56 116,40 |
4 дн. |
— |
 |
 |
 |
— | — | — |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel |
| CM1200E4C-34N (MIT) | 2 шт. | от 243 456,00 |
8 дн. |
— |
 |
 |
 |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel |
| 7MBR35VM120-50 (FUJI) | 10 шт. | от 7 754,98 |
25 дн. |
— |
 |
 |
 |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel |
| 7MBR50VN120-50 (FUJI) | 8 шт. | от 12 191,70 |
25 дн. |
— |
 |
 |
 |
 |
 |
— | — | — |
 |
— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| 7MBR100VN120-50 (FUJI) | 10 шт. | от 15 147,00 |
25 дн. |
— |
 |
 |
 |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI200VH-120-50 (FUJI) | 8 шт. | от 11 810,30 |
25 дн. |
— |
 |
 |
 |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI300VH-120-50 (FUJI) | 132 шт. | от 5 886,32 |
12 дн. |
— |
 |
 |
 |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI450VH-120-50 (FUJI) | 18 шт. | от 16 755,90 |
25 дн. |
— |
 |
 |
 |
 |
 |
— | — | — |
 |
— | Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel |
| GT50JR22STA1.E.S (TOS) | 3 389 шт. | от 243,45 |
4 дн. |
 |
— | — | — | — | — | — | — | — | — | — | — |
| CM150DU-34KA (MIT) | 1 шт. | от 12 178,90 |
3 дн. |
— |
 |
 |
 |
— | — | — |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel |
| CM400DY-34A (MIT) | 21 шт. | от 20 869,40 |
3 дн. |
— |
 |
 |
 |
 |
 |
— |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel |
| CM50RL-24NF (MIT) | 1 шт. | от 11 833,10 |
3 дн. |
— |
 |
 |
 |
— | — | — |
 |
— |
 |
— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
igbt-tranzistory