IGBT транзисторы
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- Производитель
- Наименование
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Корпус
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Напряжение К-Э максимальное
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Ток коллектора максимальный при 25°C
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Напряжение насыщения К-Э
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Время включения
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Время выключения
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Время восстановления диода
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Максимальная мощность
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Заряд затвора
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Тип входа
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Тип
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Примечание
Найдено: 5045
Вид:
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| CM200RL-24NF (MIT) | 6 шт. | от 61 108,70 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel |
| GT60N321 (TOS) | 80 шт. | от 911,17 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel |
| CM600HU-24F (MIT) | 28 шт. | от 15 755,40 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel |
| GT50J325 (TOS) | 26 шт. | от 1 825,70 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel |
| CM50MXA-24S (MIT) | 4 шт. | от 20 539,60 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| CM150RL-24NF (MIT) | 3 шт. | от 53 881,90 |
7 дн. |
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— | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel |
| CM1200E4C-34N (MIT) | 1 шт. | от 239 279,00 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel |
| 7MBR35VM120-50 (FUJI) | 10 шт. | от 7 738,92 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel |
| 7MBR50VN120-50 (FUJI) | 8 шт. | от 12 163,20 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| 7MBR100VN120-50 (FUJI) | 10 шт. | от 15 157,20 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI200VH-120-50 (FUJI) | 8 шт. | от 11 758,20 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI300VH-120-50 (FUJI) | 128 шт. | от 5 794,54 |
12 дн. |
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— | Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI450VH-120-50 (FUJI) | 18 шт. | от 16 782,30 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel |
| GT50JR22STA1.E.S (TOS) | 1 878 шт. | от 245,84 |
4 дн. |
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| CM150DU-34KA (MIT) | 1 шт. | от 11 970,00 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel |
| CM400DY-34A (MIT) | 21 шт. | от 20 511,30 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel |
| CM50RL-24NF (MIT) | 1 шт. | от 11 630,00 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| GT30J121 (TOS) | 724 шт. | от 679,39 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel |
| CM450HA-5F (MIT) | 4 шт. | от 34 704,30 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 450A I(C), 250V V(BR)CES, N-Channel |
| CM50BU-24H (MIT) | 4 шт. | от 24 961,90 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
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