Полевые транзисторы
?page=11&sort=ItemsParamsX.rank&direction=desc
- Наименование
-
Корпус
-
Конфигурация и полярность
-
Максимальное напряжение сток-исток
-
Ток стока номинальный при 25°C, без учета ограничений корпуса
-
Сопротивление открытого канала (мин)
-
Сопротивление открытого канала при диапазоне Uзатв(ном)
-
Диапазон номинальных напряжений затвора
-
Максимальное напряжение затвора
-
Заряд затвора
-
Рассеиваемая мощность
-
Примечание
-
Ёмкость затвора
-
Особенности
Фильтр×
- Производитель:CN BELL ×
Найдено: 341
Вид:
| | | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BL8N60-P (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-220, 600 V, 8 A, 0,85 Ohm |
 |
Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply |
|
BL8N60-U (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-220, 600 V, 8 A, 0,85 Ohm |
 |
Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply |
|
BL90N25-F (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-247, 250 V, 90 A, 0,027 Ohm |
 |
Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply |
|
BL9N50-A (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-220F, 500 V, 9 A, 0,6 Ohm |
 |
Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply, Electronic ballast |
|
BL9N50-D (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-252, 500 V, 9 A, 0,6 Ohm |
 |
Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply, Electronic ballast |
|
BL9N50-P (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-220, 500 V, 9 A, 0,6 Ohm |
 |
Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply, Electronic ballast |
|
BL9N50-U (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-251, 500 V, 9 A, 0,6 Ohm |
 |
Fast Switching, Low Crss, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply, Electronic ballast |
|
BL9N90-A (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-220F, 900 V, 9 A, 0,83 Ohm |
 |
Fast Switching, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply |
|
BL9N90-F (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel High Voltage Planar MOSFET, TO-247, 900 V, 9 A, 0,83 Ohm |
 |
Fast Switching, 100% avalanche tested, Improved dv/dt capability, RoHS product, High frequency switching mode power supply |
|
BLM04N08-B (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-263, 80 V, 200 A, 0,003 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
|
BLM04N08-P (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-220, 80 V, 200 A, 0,003 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
|
BLM06N10-B (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-263, 100 V, 140 A, 0,005 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
|
BLM06N10-P (CN BELL)
|
нет в наличии | — |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-220, 100 V, 140 A, 0,005 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
|
BLM07N06-P (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-220, 60 V, 95 A, 0,006 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency circuits, Uninterruptible power supply |
|
BLM08N06-D (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-252-2L, 60 V, 80 A, 0,007 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency circuits, Uninterruptible power supply |
|
BLM08N06-E (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, SOP8, 60 V, 80 A, 0,007 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency circuits, Uninterruptible power supply |
|
BLM08N06-P (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-220 60 V, 80 A, 0,007 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency circuits, Uninterruptible power supply |
|
BLM08N10-B (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-263, 100 V, 110 A, 0,075 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
|
BLM08N10-P (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-220, 100 V, 110 A, 0,075 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
|
BLM08N68-P (CN BELL)
|
нет в наличии | — |
— |
— |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
N-Channel Trench MOSFET, TO-220, 68 V, 90 A, 0,0065 Ohm |
 |
Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency ciutuits, Uninterruptible power supply |
polevye-tranzistory