IGBT транзисторы
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- Производитель
- Наименование
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Корпус
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Напряжение К-Э максимальное
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Ток коллектора максимальный при 25°C
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Напряжение насыщения К-Э
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Время включения
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Время выключения
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Время восстановления диода
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Максимальная мощность
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Заряд затвора
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Тип входа
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Тип
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Примечание
Найдено: 5045
Вид:
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| CM400DY-12NF (MIT) | 12 шт. | от 23 065,50 |
6 дн. |
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— | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel |
| CM200RL-24NF (MIT) | 6 шт. | от 62 168,50 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel |
| GT60N321 (TOS) | 80 шт. | от 909,35 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel |
| CM600HU-24F (MIT) | 28 шт. | от 16 251,40 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel |
| GT50J325 (TOS) | 1 шт. | от 1 845,72 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel |
| CM50MXA-24S (MIT) | 4 шт. | от 20 895,90 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| CM150RL-24NF (MIT) | 3 шт. | от 56 351,20 |
7 дн. |
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— | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel |
| CM1200E4C-34N (MIT) | 1 шт. | от 246 812,00 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel |
| 7MBR35VM120-50 (FUJI) | 10 шт. | от 7 688,11 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel |
| 7MBR50VN120-50 (FUJI) | 8 шт. | от 12 083,40 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| 7MBR100VN120-50 (FUJI) | 10 шт. | от 15 057,70 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI200VH-120-50 (FUJI) | 8 шт. | от 11 681,10 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI300VH-120-50 (FUJI) | 128 шт. | от 5 921,92 |
12 дн. |
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— | Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES, N-Channel |
| 2MBI450VH-120-50 (FUJI) | 18 шт. | от 16 672,20 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel |
| GT50JR22STA1.E.S (TOS) | 2 880 шт. | от 245,35 |
4 дн. |
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| CM150DU-34KA (MIT) | 1 шт. | от 12 346,80 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel |
| CM400DY-34A (MIT) | 21 шт. | от 21 157,10 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel |
| CM50RL-24NF (MIT) | 1 шт. | от 11 996,20 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| GT30J121 (TOS) | 424 шт. | от 462,25 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel |
| GT60M301 (TOS) | 132 шт. | от 2 849,01 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel |
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