IGBT транзисторы
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- Производитель
- Наименование
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Корпус
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Напряжение К-Э максимальное
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Ток коллектора максимальный при 25°C
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Напряжение насыщения К-Э
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Время включения
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Время выключения
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Время восстановления диода
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Максимальная мощность
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Заряд затвора
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Тип входа
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Тип
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Примечание
Фильтр×
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Найдено: 388
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| STGP10NC60KD (ST) | 17 666 шт. | от 117,55 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGW30NC120HD (ST) | 2 158 шт. | от 442,06 |
30 дн. |
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— | IGBT, N 1200V 30A TO-247; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.75V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; ;RoHS Compliant: Yes |
| STGW30NC60WD (ST) | 2 068 шт. | от 219,85 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC |
| STGW39NC60VD (ST) | 4 690 шт. | от 183,75 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC |
| STGD18N40LZT4 (ST) хит | 6 601 шт. | от 112,78 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 25A I(C), 420V V(BR)CES, N-Channel, TO-252 |
| STGF20M65DF2 (ST) | 1 555 шт. | от 155,44 |
30 дн. |
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| SGT50T65FD1PN (SILAN) | 7 527 шт. | от 156,97 |
3 дн. |
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| FGH40N60SMDF-F085-VB (VBSEMI) | 11 349 шт. | от 148,03 |
17 дн. |
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| STGP7NC60HD (ST) | 7 571 шт. | от 297,61 |
3 дн. |
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— | IGBT, 600V, 7A, TO-220 |
| STGF6NC60HD (ST) | 4 766 шт. | от 100,75 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGB6NC60HDT4 (ST) | 4 986 шт. | от 86,56 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel |
| STGD10NC60HT4 (ST) | 1 шт. | от 382,95 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel |
| STGB18N40LZT4 (ST) | 3 300 шт. | от 78,70 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 30A I(C), 420V V(BR)CES, N-Channel, TO-263AB |
| STGW20NC60VD (ST) | 5 332 шт. | от 277,11 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247 |
| STGW35NB60SD (ST) | 472 шт. | от 810,09 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AA |
| STGD14NC60KT4 (ST) | 22 шт. | от 87,94 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel |
| STGD8NC60KDT4 (ST) | 9 757 шт. | от 121,24 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel |
| STGF20NB60S (ST) | 27 шт. | от 322,80 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGP10NC60HD (ST) | 3 137 шт. | от 145,78 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGP14NC60KD (ST) | 1 988 шт. | от 125,69 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
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