IGBT транзисторы
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- Производитель
- Наименование
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Корпус
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Напряжение К-Э максимальное
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Ток коллектора максимальный при 25°C
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Напряжение насыщения К-Э
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Время включения
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Время выключения
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Время восстановления диода
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Максимальная мощность
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Заряд затвора
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Тип входа
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Тип
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Примечание
Фильтр×
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Найдено: 388
Вид:
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| STGD10NC60KT4 (ST) | 2 479 шт. | от 156,81 |
45 дн. |
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— | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel |
| STGD7NB60ST4 (ST) | 4 193 шт. | от 188,75 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA |
| STGD7NC60HT4 (ST) | 8 370 шт. | от 158,08 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-252AA |
| STGF7NC60HD (ST) | 4 620 шт. | от 114,78 |
45 дн. |
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— | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGF8NC60KD (ST) | 1 975 шт. | от 312,54 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGP10NB60SD (ST) | 754 шт. | от 220,00 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGP10NC60H (ST) | 59 шт. | от 289,01 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGP30NC60W (ST) | 909 шт. | от 250,02 |
45 дн. |
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— | IGBT, N 600V 30A TO-220 |
| STGP8NC60KD (ST) | 3 184 шт. | от 56,26 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGY40NC60VD (ST) | 969 шт. | от 564,41 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel |
| GT50J325 (TOS) | 3 шт. | от 1 825,69 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel |
| CM50MXA-24S (MIT) | 4 шт. | от 19 873,20 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
| STGF35HF60W (ST) | 857 шт. | от 286,58 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel |
| STGFW30NC60V (ST) | 279 шт. | от 817,00 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel |
| STGF19NC60KD (ST) | 2 288 шт. | от 115,78 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGF20H60DF (ST) | 5 460 шт. | от 185,04 |
25 дн. |
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| STGFW20V60DF (ST) | 526 шт. | от 339,33 |
25 дн. |
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| STGP20H60DF (ST) | 3 376 шт. | от 162,65 |
25 дн. |
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Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGP20V60DF (ST) | 1 526 шт. | от 152,40 |
25 дн. |
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Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel |
| STGP30V60DF (ST) | 4 шт. | от 784,20 |
25 дн. |
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Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
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