IGBT транзисторы
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- Производитель
- Наименование
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Корпус
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Напряжение К-Э максимальное
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Ток коллектора максимальный при 25°C
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Напряжение насыщения К-Э
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Время включения
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Время выключения
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Время восстановления диода
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Максимальная мощность
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Заряд затвора
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Тип входа
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Тип
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Примечание
Фильтр×
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Найдено: 388
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| CGWT80N65F2KAD (JSCJ) | 12 062 шт. | от 146,17 |
12 дн. |
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| HGTG11N120CND-VB (VBSEMI) | 10 232 шт. | от 165,56 |
18 дн. |
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— | — | 1200V Trench and Fieldstop IGBT; TO-247 |
| FGH40N60SFDTU TO-247 (YIXING) хит | 296 шт. | от 125,10 |
3 дн. |
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600 V, 40 A Field Stop IGBT; TO-247 |
| CM600DU-24NF (MIT) | 6 шт. | от 67 395,60 |
7 дн. |
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— | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel |
| STGB10NC60HDT4 (ST) | 3 737 шт. | от 177,51 |
3 дн. |
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— | IGBT, N 600V 10A D?PAK |
| STGB10NC60KDT4 (ST) | 4 471 шт. | от 63,38 |
3 дн. |
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— | IGBT, SMD, 600V, 10A, D2-PAK; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; ;RoHS Compliant: Yes |
| STGB7NC60HDT4 (ST) | 1 577 шт. | от 249,36 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
| STGB8NC60KDT4 (ST) | 3 627 шт. | от 151,94 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel |
| STGD10NC60KDT4 (ST) | 5 316 шт. | от 130,77 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel |
| STGF10NC60KD (ST) | 4 168 шт. | от 349,55 |
4 дн. |
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— | IGBT, TO-220FP; Transistor Type:IGBT; DC Collector Current:9A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:25W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case ;RoHS Compliant: Yes |
| STGF7NB60SL (ST) | 2 117 шт. | от 137,14 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| STGP10NB60S (ST) | 4 207 шт. | от 133,59 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
| CM100DU-34KA (MIT) | 98 шт. | от 11 041,30 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel |
| CM2400HCB-34N (MIT) | 4 шт. | от 172 773,00 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel |
| CM600HG-130H (MIT) | 4 шт. | от 161 099,00 |
3 дн. |
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— | Insulated Gate Bipolar Transistor, 600A I(C), 6500V V(BR)CES, N-Channel |
| CM400DY-12NF (MIT) | 13 шт. | от 14 310,00 |
6 дн. |
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— | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel |
| CM200RL-24NF (MIT) | 6 шт. | от 59 125,80 |
8 дн. |
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— | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel |
| GT60N321 (TOS) | 90 шт. | от 899,49 |
4 дн. |
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— | Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel |
| STGB14NC60KDT4 (ST) | 2 447 шт. | от 167,55 |
30 дн. |
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— | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
| STGB20NB41LZT4 (ST) | 1 704 шт. | от 395,82 |
25 дн. |
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— | Insulated Gate Bipolar Transistor, 40A I(C), 382V V(BR)CES, N-Channel, TO-263AB |
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